Invention Grant
- Patent Title: Spin-valve magnetoresistive thin film element
- Patent Title (中): 旋转阀磁阻薄膜元件
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Application No.: US09357915Application Date: 1999-07-20
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Publication No.: US06424506B1Publication Date: 2002-07-23
- Inventor: Masamichi Saito , Naoya Hasegawa
- Applicant: Masamichi Saito , Naoya Hasegawa
- Priority: JP10-204756 19980721; JP10-204763 19980721; JP10-204767 19980721
- Main IPC: G11B539
- IPC: G11B539

Abstract:
A spin-valve magnetoresistive element includes a plurality of layers. The magnetic moment of a first pinned magnetic layer is greater than the magnetic moment of a second pinned magnetic layer, and the magnetic moment of the first pinned magnetic layer faces in the left direction in the drawing. Accordingly, the synthesized magnetic moment of the first pinned magnetic layer and the second pinned magnetic layer faces in the left direction in the drawing. Thus, causing a sensing current to flow in a first direction so as to generate a sensing galvanomagnetic field circling in the right-hand direction causes the direction of the sensing galvanomagnetic field and the direction of the synthesized magnetic moment to match, thereby facilitating improvement in the stability of the magnetization state of the first and second pinned magnetic layers.
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