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发明授权
US06246628B1 Semiconductor memory device having read/write amplifiers disposed for respective memory segments 有权
具有为相应存储器段设置的读/写放大器的半导体存储器件

  • 专利标题： Semiconductor memory device having read/write amplifiers disposed for respective memory segments
  • 专利标题（中）： 具有为相应存储器段设置的读/写放大器的半导体存储器件
  • 申请号： US09537384
    申请日： 2000-03-29
  • 公开(公告)号： US06246628B1
    公开(公告)日： 2001-06-12
  • 发明人: Masatomo Hasegawa , Shinichi Yamada , Satoru Saitoh
  • 申请人： Masatomo Hasegawa , Shinichi Yamada , Satoru Saitoh
  • 优先权： JP11-149249 19990528
  • 主分类号： G11C800
  • IPC分类号： G11C800
Semiconductor memory device having read/write amplifiers disposed for respective memory segments
摘要：
Segment selection circuits 40A are arranged adjacent read/write amplifiers 20. When one of the segments 0 to 7 in a memory cell array 10 is selected by a signal on segment address lines CA8 to CA6, a read amplifier 21 or a write amplifier 22 of the read/write amplifier 20 corresponding to the selected segment is activated in response to activation of a signal on a read timing signal line RT or a write timing signal line WT. The lines CA8 to CA6, RT and WT are arranged along the row of the segment selection circuits 40A.
摘要（中）：

段选择电路40A被布置在读/写放大器20相邻处。当存储单元阵列10中的片段0至7之一被片地址线CA8至CA6上的信号选择时，读放大器21或写放大器22 响应于读定时信号线RT或写定时信号线WT上的信号的激活，激活对应于所选择的段的读/写放大器20。 线CA8至CA6，RT和WT沿着段选择电路40A的行布置。

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