Invention Grant
- Patent Title: Apparatus for recovering impurities from a silicon wafer
- Patent Title (中): 用于从硅晶片回收杂质的装置
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Application No.: US09030818Application Date: 1998-02-26
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Publication No.: US06182675B2Publication Date: 2001-02-06
- Inventor: Jiro Naka , Naohiko Fujino , Noriko Hirano , Junji Kobayashi , Kazuo Kuramoto
- Applicant: Jiro Naka , Naohiko Fujino , Noriko Hirano , Junji Kobayashi , Kazuo Kuramoto
- Priority: JP9-45680 19970228
- Main IPC: B08B302
- IPC: B08B302
Abstract:
A method for recovering impurities on a surface of a silicon wafer includes a first step of using a pretreatment solution to decompose an oxide film, a nitride film on an oxynitridation film formed at a peripheral portion on a surface of a silicon wafer and to remove impurities on the peripheral portion and a second step of recovering impurities on the surface of the wafer expect for the peripheral portion.
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