Method for forming low contact resistance bonding pad

Invention Grant

US5824234A Method for forming low contact resistance bonding pad 失效

Title translation: 用于形成低接触电阻焊盘的方法

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Patent Title: Method for forming low contact resistance bonding pad
Patent Title (中): 用于形成低接触电阻焊盘的方法
Application No.: US725122

Application Date: 1996-10-02
Publication No.: US5824234A

Publication Date: 1998-10-20
Inventor: Chon-Shin Jou , Ting-Sing Wang , Chun-Lin Chen , Ming-Huan Tsai , Ming-Ru Tsai
Applicant: Chon-Shin Jou , Ting-Sing Wang , Chun-Lin Chen , Ming-Huan Tsai , Ming-Ru Tsai
Applicant Address: TWX Hsinchu
Assignee: Mosel Vitelic, Inc.
Current Assignee: Mosel Vitelic, Inc.
Current Assignee Address: TWX Hsinchu
Main IPC: H01L21/311
IPC: H01L21/311 ; H01L21/60 ; H01L21/00

Method for forming low contact resistance bonding pad

Abstract:

The present invention provides a method for forming a bonding pad having a low contact resistance. The method includes steps of: a) forming a bonding pad structure on a substrate having a metal layer by forming a passivation layer over said metal layer and etching the passivation layer with a fluorine-containing gas by which a fluorine-containing layer is formed on a surface of said bonding pad structure; and b) removing the fluorine-containing layer for reducing a contact resistance of said bonding pad structure.

Abstract(Chinese):

本发明提供一种形成接触电阻低的焊盘的方法。该方法包括以下步骤：a）在具有金属层的衬底上形成焊盘结构，在所述金属层上形成钝化层，并用形成含氟层的含氟气体蚀刻钝化层所述焊盘结构的表面; 以及b）除去所述含氟层以降低所述接合焊盘结构的接触电阻。

Public/Granted literature

US5140262A Geartooth sensor with a centerline in nonintersecting relation with a center of rotation of a rotatable member Public/Granted day:1992-08-18

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀