Invention Grant
US5688358A R.F. plasma reactor with larger-than-wafer pedestal conductor
失效
R.F. 具有大于晶圆的基座导体的等离子体反应器
- Patent Title: R.F. plasma reactor with larger-than-wafer pedestal conductor
- Patent Title (中): R.F. 具有大于晶圆的基座导体的等离子体反应器
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Application No.: US400329Application Date: 1995-03-08
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Publication No.: US5688358APublication Date: 1997-11-18
- Inventor: Yoichiro Tanaka , Megumi Taoka , Barney Cohen
- Applicant: Yoichiro Tanaka , Megumi Taoka , Barney Cohen
- Applicant Address: CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: CA Santa Clara
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01J37/32 ; H01L21/205 ; H01L21/302 ; H01L21/683 ; H01L21/00
Abstract:
A pedestal for supporting a semiconductor substrate in an R.F. plasma reactor chamber includes a conductive disk platen having a diameter exceeding the diameter of the substrate so that an outer annular portion of the conductive disk platen provides a direct path of R.F. power from the plasma while a remaining inner portion of the conductive disk provides a path of R.F. power from the plasma through the substrate, an etch-resistant cover shielding the conductive platen from the plasma, a portion of the etch-resistant layer underlying the substrate, the etch-resistant cover including a raised disk overlying a central portion of the conductive disk platen and underlying the substrate and having a diameter less than the diameter of the substrate so that a peripheral portion of the substrate extends beyond the circumference of the raised disk, a recessed ring annulus overlying an outer portion of the conductive disk platen and having a top surface which is depressed below a top surface of the raised disk, an inner portion of the recessed ring annulus underlying the peripheral portion of the substrate, leaving a top portion of a side wall of the raised disk exposed to the plasma.
Public/Granted literature
- US4422020A Vertical image correction for projection TV Public/Granted day:1983-12-20
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