发明授权
- 专利标题： Method of fabricating semiconductor device having polysilicon resistor with low temperature coefficient
- 专利标题（中）： 制造具有低温系数的多晶硅电阻器的半导体器件的方法
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申请号： US247443申请日： 1994-05-23
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公开(公告)号： US5489547A公开(公告)日： 1996-02-06
- 发明人: John P. Erdeljac , Louis N. Hutter
- 申请人： John P. Erdeljac , Louis N. Hutter
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/3215 ; H01L27/06 ; H01L21/70
摘要：
A semiconductor device having a p type polysilicon resistor (56) with a moderate sheet resistance and low temperature coefficient of resistance is formed by a double-level polysilicon process. The process also produces n and p-channel transistors (44, 50), a capacitor having upper and lower n type polysilicon capacitor plates (36, 26), an n type polysilicon resistor (32) having a high sheet resistance, and an n type resistor (34) having a low sheet resistance. The p type doping used to form the source/drain regions (48) of p-channel transistor (50) counterdopes n type second level polysilicon to form p type polysilicon resistor (56) without effecting capacitor plates (36, 26) or the n type resistors (32, 34).
公开/授权文献
- US4919077A Semiconductor producing apparatus 公开/授权日：1990-04-24
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