发明授权
- 专利标题： Method for forming capacitors with roughened single crystal plates
- 专利标题（中）： 用粗糙单晶板形成电容器的方法
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申请号： US69473申请日： 1993-06-01
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公开(公告)号： US5384152A公开(公告)日： 1995-01-24
- 发明人: Jack C. Chu , Louis Lu-Chen Hsu , Toshio Mii , Joseph F. Shepard , Scott R. Stiffler , Manu J. Tejwani , Edward J. Vishnesky
- 申请人： Jack C. Chu , Louis Lu-Chen Hsu , Toshio Mii , Joseph F. Shepard , Scott R. Stiffler , Manu J. Tejwani , Edward J. Vishnesky
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/02 ; H01L21/822 ; H01L21/8242 ; H01L27/10 ; H01L27/108 ; H01L29/94 ; H01L21/70 ; B05D5/12
摘要：
A capacitor is provided having a substrate and a first capacitor plate including a lattice mismatched crystalline material is formed over and supported by a surface of the substrate. A layer of insulating material is formed over and supported by the first capacitor plate. A second capacitor plate including a layer of conductive material is formed over and supported by the layer of insulating material.
公开/授权文献
- USD409670S Punching bag 公开/授权日：1999-05-11
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