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US5191235A Semiconductor integrated circuit device having substrate potential detection circuit 失效
具有基板电位检测电路的半导体集成电路装置

Semiconductor integrated circuit device having substrate potential
detection circuit
摘要:
A node potential V1 which is obtained by the division of an internal reference potential and a substrate potential and another node potential V2 which is obtained by the division of the internal reference potential and the ground potential are compared with each other by a current-mirror amplifier. The initial setting of the above two node potentials (V1 and V2) is made as V1>V2. When the substrate potential becomes large in its absolute value, the node potential V1 falls following such change and, when it reaches a predetermined substrate potential, the potentials result in V1
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