发明授权
- 专利标题： Selective epitaxial growth structure and isolation
- 专利标题（中）： 选择性外延生长结构和分离
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申请号： US106210申请日： 1987-10-09
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公开(公告)号： US4908691A公开(公告)日： 1990-03-13
- 发明人: Victor J. Silvestri , Paul J. Tsang
- 申请人： Victor J. Silvestri , Paul J. Tsang
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L27/082
- IPC分类号： H01L27/082 ; H01L21/331 ; H01L21/76 ; H01L21/762 ; H01L21/8228 ; H01L21/8234 ; H01L21/8238 ; H01L27/08 ; H01L27/088 ; H01L27/092 ; H01L29/73
摘要：
A novel method of employing selective epitaxial growth, in which interdevice isolation is intrinsically formed. Problems stemming from formation of all active device elements within selective epitaxial growth regions are addressed. Additionally, there is shown a novel transistor array formed according to the method of the invention.
公开/授权文献
- USD432940S Bead 公开/授权日：2000-10-31
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