Invention Application
- Patent Title: LOW NOISE AMPLIFIER WITH POST DISTORTION CIRCUIT
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Application No.: US18215439Application Date: 2023-06-28
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Publication No.: US20250007468A1Publication Date: 2025-01-02
- Inventor: Manouchehr Ghanevati , Kevin M. Leong , Mansoor K. Siddiqui
- Applicant: Northrop Grumman Systems Corporation
- Applicant Address: US VA Falls Church
- Assignee: Northrop Grumman Systems Corporation
- Current Assignee: Northrop Grumman Systems Corporation
- Current Assignee Address: US VA Falls Church
- Main IPC: H03F1/32
- IPC: H03F1/32 ; H03F3/19

Abstract:
An exemplary RF amplifier circuit has a LNA with its output coupling RF signals to a load. A post distortion (PD) circuit having a semiconductor device with a control gate biased to cause the semiconductor device to operate in a nonlinear region at or near pinch-off that is coupled to the output of the LNA. The PD circuit generates at least one PD intermodulation product at the PD port in response to the RF signals being received from the LNA through the coupling. The at least one PD intermodulation product being out of phase to an intermodulation product produced by the LNA that is present at the output. The at least one PD intermodulation product combining with the intermodulation product produced by the LNA to cause a reduction of the intermodulation product at the load by at least several dB for at least one frequency in the range of frequencies.
Information query
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