发明公开
- 专利标题： MANUFACTURING METHOD OF DISPLAY SUBSTRATE, DISPLAY SUBSTRATE AND DISPLAY DEVICE
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申请号： US18769204申请日： 2024-07-10
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公开(公告)号： US20240363737A1公开(公告)日： 2024-10-31
- 发明人: Jun Liu , Luke Ding , Jingang Fang , Bin Zhou , Leilei Cheng , Wei Li
- 申请人： HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
- 申请人地址： CN Hefei
- 专利权人： HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人： HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人地址： CN Hefei
- 优先权： CN 1711181291.9 2017.11.23
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/027 ; H01L21/311 ; H01L21/3213 ; H01L21/44 ; H01L21/475 ; H01L21/4757 ; H01L21/4763 ; H01L27/12 ; H01L29/40 ; H01L29/417 ; H01L29/786
摘要：
Provided are a manufacturing method of a display substrate, a display substrate, and a display device. The display substrate includes: a base substrate; and a top-gate type thin film transistor located on a side of the base substrate, the top-gate type thin film transistor comprises an active layer, a gate insulation layer and a gate electrode sequentially disposed in a direction away from the base substrate. A side surface of the gate insulation layer close to the gate electrode extends beyond an edge of the gate electrode in a direction parallel to the base substrate, and a side surface of the active layer close to the gate insulation layer extends beyond an edge of the gate insulation layer in the direction parallel to the base substrate.
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