发明公开
- 专利标题： SEMICONDUCTOR DEVICE
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申请号： US18769182申请日： 2024-07-10
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公开(公告)号： US20240363707A1公开(公告)日： 2024-10-31
- 发明人: Shih-Wen HUANG , Chung-Ting KO , Hong-Hsien KE , Chia-Hui LIN , Tai-Chun HUANG
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 分案原申请号： US15992619 2018.05.30
- 主分类号： H01L29/417
- IPC分类号： H01L29/417 ; H01L21/02 ; H01L21/311 ; H01L21/3115 ; H01L21/768 ; H01L21/8234 ; H01L29/08 ; H01L29/45 ; H01L29/66 ; H01L29/78
摘要：
A semiconductor device is provided. The semiconductor device includes a source/drain structure, a contact structure, a glue layer, a barrier layer, and a silicide layer. The contact structure is over the source/drain structure. The glue layer surrounds the contact structure. The barrier layer is formed on at least a portion of a sidewall surface of the contact structure. The silicide layer is between the source/drain structure and the contact structure, and the silicide layer is in direct contact with the glue layer. The bottom surface of the glue layer is lower than the top surface of the source/drain structure and the bottom surface of the barrier layer.
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