- 专利标题: SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
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申请号: US18768002申请日: 2024-07-10
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公开(公告)号: US20240363538A1公开(公告)日: 2024-10-31
- 发明人: SHU-WEI LI , YU-CHEN CHAN , MENG-PEI LU , SHIN-YI YANG , MING-HAN LEE
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址: TW HSINCHU
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址: TW HSINCHU
- 分案原申请号: US17395915 2021.08.06
- 主分类号: H01L23/532
- IPC分类号: H01L23/532 ; H01L21/768 ; H01L23/522
摘要:
A semiconductor structure and method of manufacturing a semiconductor structure are provided. The semiconductor structure comprises at least one two-dimensional (2D) conductive structure; a dielectric structure disposed on the 2D conductive structure; and at least one interconnect structure disposed in the dielectric layer and extending into the 2D conductive structure. The interconnect structure laterally contacts the 2D conductive structure.
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