A nonvolatile memory device includes a plurality of tri-state latches, a sensing node circuit configured to electrically couple a sensing node therein to a bitline of the memory device, a transfer node circuit configured to electrically couple a transfer node therein to the plurality of tri-state latches, and a node connection circuit configured to electrically connect the transfer node to the sensing node. In addition, the transfer node circuit and the node connection circuit are collectively configured to simultaneously reflect data stored in at least two of the plurality of tri-state latches to the sensing node, in response to a dump sequence operation.