Provided is a memory device including a plurality of memory blocks including of at least one subblock, wherein the memory block includes a first subblock configured to store first data including of at least one bit, and a second subblock configured to perform an erase operation independently of the first subblock and store second data including of at least one bit. The memory device is configured to perform a read operation on the second data in response to a write operation being performed on the second data in the second subblock. The memory device is configured to perform a write operation on the first data in the first subblock in response to a read operation being performed on the second data in the second subblock.