发明公开
- 专利标题： SEMICONDUCTOR DEVICES WITH IMPLANTED STI REGIONS AND METHODS OF FORMING THE SAME
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申请号： US18177381申请日： 2023-03-02
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公开(公告)号： US20240297244A1公开(公告)日： 2024-09-05
- 发明人: I-Ming Chang , Yao-Sheng Huang , Hsiang-Pi Chang , Yi-Ruei Jhan , Huang-Lin Chao
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/775
- IPC分类号： H01L29/775 ; H01L21/8234 ; H01L27/088 ; H01L29/06 ; H01L29/423 ; H01L29/66
摘要：
A method for fabricating semiconductor devices includes forming a stack structure protruding from a substrate and including a plurality of first semiconductor layers and a plurality of second semiconductor layers stacked on top of one another. The method includes forming an isolation structure overlaying the substrate and a lower portion of the stack structure. The method includes implanting dopants into at least an upper portion of the isolation structure.
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