An intake/exhaust device of an apparatus for continuously growing a silicon ingot is disclosed. The intake/exhaust device of an apparatus for continuously growing a silicon ingot, according to the present invention, comprises: a chamber of which the inside is maintained in a vacuum atmosphere, and which includes a first section having a main crucible provided in the center thereof so that an ingot grows therein, and a second section having, on the outer side of the upper end thereof, a preliminary melting device for providing molten silicon to the main crucible; and a vacuum pump connected to the chamber to provide vacuum pressure so that the inside thereof is maintained in a vacuum atmosphere, wherein the first section of the chamber has a first injection port in through which inert gas for removing oxides and impurities inside the chamber flows, and a first exhaust port through which the gas is discharged, and the second section of the chamber also has a second injection port in through which the inert gas flows, and a second exhaust port through which the gas is discharged.