- 专利标题: SEMICONDUCTOR DEVICE INCLUDING CAPACITOR
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申请号: US18394884申请日: 2023-12-22
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公开(公告)号: US20240237332A1公开(公告)日: 2024-07-11
- 发明人: Jungmin PARK , Hanjin LIM , Hyungsuk JUNG
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR 20230001628 2023.01.05
- 主分类号: H10B12/00
- IPC分类号: H10B12/00
摘要:
A semiconductor device includes a structure including a conductive region, and a capacitor electrically connected to the conductive region of the structure. The capacitor includes a first electrode electrically connected to the conductive region, a second electrode on the first electrode, and a dielectric layer between the first electrode and the second electrode. At least one of the first electrode and the second electrode includes a first material layer including a first material region including a first crystalline region and a second crystalline region different from the first crystalline region, and a second material region between the first crystalline region and the second crystalline region, and a second material layer on the first material layer. At least a portion of the first material layer is between the second material layer and the dielectric layer. A material of the first material region is different from a material of the second material region.
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