- 专利标题: CONDUCTIVE LINE STRUCTURES AND METHOD OF FORMING SAME
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申请号: US18429873申请日: 2024-02-01
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公开(公告)号: US20240234321A1公开(公告)日: 2024-07-11
- 发明人: Hiranmay BISWAS , Chi-Yeh YU , Kuo-Nan YANG , Chung-Hsing WANG , Stefan RUSU , Chin-Shen LIN
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 分案原申请号: US15729281 2017.10.10
- 主分类号: H01L23/528
- IPC分类号: H01L23/528 ; G06F30/394 ; H01L21/768 ; H01L23/522
摘要:
A conductive line structure includes: first and second offset sets of long pillars that are substantially coaxial on an intra-set basis; a third set of offset short pillars, the short pillars being: overlapping of long pillars in the first and second sets; and organized into groups of first quantities of the short pillars; each of the groups being overlapping of and electrically coupled between a pair of one of the long pillars in the first set and a one of the long pillars in the second set such that, in each of the groups, each short pillar being overlapping of and electrically coupled between the pair; and each long pillar in each of the first and second sets being overlapped by a second quantity of short pillars in the third set and being electrically coupled to same; and the first quantity being less than the second quantity.
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