- 专利标题： BACKSIDE CONTACTS FOR STACKED FIELD EFFECT TRANSISTORS
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申请号： US18089655申请日： 2022-12-28
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公开(公告)号： US20240222227A1公开(公告)日： 2024-07-04
- 发明人: Ruilong Xie , Julien Frougier , Min Gyu Sung , Chanro Park , Juntao Li
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/8234 ; H01L29/06 ; H01L29/417 ; H01L29/786
摘要：
Embodiments are disclosed for a semiconductor device and a method for fabrication. The device includes a first gate, having a top FET that is disposed above a bottom FET, and in electrical contact with a top source/drain epitaxial (S/D epi) and a back end of line (BEOL) interconnect. Additionally, the device includes the bottom FET. The bottom FET is in electrical contact with a bottom S/D epi. Further, a shallow backside contact is in electrical contact with the bottom S/D epi. Additionally, the device includes a deep via that is in electrical contact with the BEOL interconnect and the shallow backside contact. The deep via and the shallow backside contact provide a conductive path between the BEOL interconnect and the bottom S/D epi.
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