- 专利标题： Method of Conductive Material Deposition
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申请号： US18070030申请日： 2022-11-28
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公开(公告)号： US20240178003A1公开(公告)日： 2024-05-30
- 发明人: Hirokazu Aizawa , Kai-Hung Yu , Nicholas Joy , Yusuke Yoshida , Kandabara Tapily
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 主分类号： H01L21/3213
- IPC分类号： H01L21/3213 ; G03F7/20 ; H01L21/02 ; H01L21/033 ; H01L21/3205
摘要：
A method for processing a substrate that includes: depositing a filling material over the substrate including a first recess and a second recess, the filling material filling the first recess and the second recess; patterning the filling material such that the first recess is reopened while the second recess remains filled with the filling material; filling the first recess with a conductive material to a first height; etching the filling material selectively to the conductive material to reopen the second recess; filling a remainder of the first recess and the second recess with the conductive material; and performing an etch back process to etch the conductive material such that the first recess and the second recess are filled with the conductive material to a second height.
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