- 专利标题： FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONTACT
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申请号： US18053795申请日： 2022-11-09
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公开(公告)号： US20240153990A1公开(公告)日： 2024-05-09
- 发明人: Chanro Park , Ruilong Xie , Julien Frougier , Min Gyu Sung , Juntao Li
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/8238 ; H01L23/48 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L29/775 ; H01L29/786
摘要：
A semiconductor device includes a nanostructure field effect transistor (FET). The FET includes a gate and a source or drain (S/D) region. The FET also includes a backside S/D contact connected to a top surface of the S/D region. The backside S/D contact includes a lateral portion upon the top surface of the S/D region. The lateral portion further laterally extends adjacent to or past the first S/D region. The backside S/D contact includes a vertical portion that extends vertically downward from the lateral portion below the bottom surface of the substrate layer. The FET also includes a backside S/D mushroom that extends vertically downward from the vertical portion.
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