发明公开
- 专利标题: SEMICONDUCTOR MEMORY DEVICES
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申请号: US18545419申请日: 2023-12-19
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公开(公告)号: US20240138143A1公开(公告)日: 2024-04-25
- 发明人: Taejin PARK , Kyujin KIM , Chulkwon PARK , Sunghee HAN
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR 20200175837 2020.12.15
- 主分类号: H10B12/00
- IPC分类号: H10B12/00
摘要:
A semiconductor memory device includes a substrate comprising a memory cell region and a dummy cell region surrounding the memory cell region, the memory cell region including a plurality of memory cells, a plurality of active regions in the memory cell region, each of the plurality of active regions extending in a long axis direction, the long axis direction being a diagonal direction with respect to a first horizontal direction and a second horizontal direction orthogonal to the first horizontal direction, each of the plurality of active regions having a first width in a short axis direction orthogonal to the long axis direction, and a plurality of dummy active regions in the dummy cell region, each extending in the long axis direction, each of the plurality of dummy active regions having a second width greater than the first width in the short axis direction.
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