Invention Publication
- Patent Title: SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE
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Application No.: US18278421Application Date: 2021-11-24
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Publication No.: US20240136403A1Publication Date: 2024-04-25
- Inventor: Kyoko OKITA , Tsubasa HONKE , Shunsaku UETA
- Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Applicant Address: JP Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka
- Priority: JP 21039845 2021.03.12
- International Application: PCT/JP2021/042936 2021.11.24
- Date entered country: 2023-08-22
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L21/306

Abstract:
A silicon carbide substrate includes a first main surface, a second main surface, a threading screw dislocation, and a blind scratch. The second main surface is located opposite to the first main surface. The threading screw dislocation extends to each of the first main surface and the second main surface. The blind scratch is exposed at the first main surface and extends linearly as viewed in a direction perpendicular to the first main surface. A value obtained by dividing an area density of the blind scratch by an area density of threading screw dislocation is smaller than 0.13.
Public/Granted literature
- US20240234509A9 SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE Public/Granted day:2024-07-11
Information query
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