Invention Publication
- Patent Title: SEMICONDUCTOR MEMORY DEVICE CAPABLE OF SYNCHRONIZING CLOCK SIGNALS IN CS GEARDOWN MODE
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Application No.: US18297908Application Date: 2023-04-09
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Publication No.: US20240135985A1Publication Date: 2024-04-25
- Inventor: Seunghwan Hong , Jang-Woo Ryu
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20220135709 2022.10.19
- Main IPC: G11C11/4076
- IPC: G11C11/4076 ; G06F1/12 ; G11C11/408 ; H03K3/037 ; H03K19/20

Abstract:
A semiconductor device includes a chip select signal flip-flop configured to: latch a chip select signal in-sync with a first propagation clock signal, and output a first chip select enable signal, and latch the chip select signal in-sync with a second propagation clock signal having a phase opposite to a phase of the first propagation clock signal, and output a second chip select enable signal; and a clock control circuit configured to generate the first propagation clock signal and the second propagation clock signal based on a clock signal, and selectively output one of the first propagation clock signal and the second propagation clock signal based on an enable level of the first chip select enable signal and an enable level of the second chip select enable signal.
Public/Granted literature
- US20240233808A9 SEMICONDUCTOR MEMORY DEVICE CAPABLE OF SYNCHRONIZING CLOCK SIGNALS IN CS GEARDOWN MODE Public/Granted day:2024-07-11
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