- 专利标题: CAPACITOR STRUCTURE, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR STRUCTURE
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申请号: US18462394申请日: 2023-09-06
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公开(公告)号: US20240096931A1公开(公告)日: 2024-03-21
- 发明人: Jungmin PARK , Hanjin LIM , Hyungsuk JUNG
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR 20220118269 2022.09.20
- 主分类号: H10B12/00
- IPC分类号: H10B12/00
摘要:
A capacitor structure includes a lower electrode structure disposed on a substrate, including an oxide of a first metal having 4 valence electrons, and being doped with a second metal having 3, 5, 6, or 7 valence electrons, a dielectric pattern disposed on a sidewall of the lower electrode structure, and an upper electrode disposed on a sidewall of the dielectric pattern.
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