Disclosed are semiconductor memory devices and electronic systems including the same. The semiconductor memory device may include a vertical channel perpendicular to a top surface of a substrate, word lines disposed on a first side of the vertical channel and vertically stacked on the substrate, back-gate electrodes disposed on a second side of the vertical channel and vertically stacked on the substrate, a ferroelectric layer disposed between the word lines and the first side of the vertical channel, a first intermediate insulating layer disposed between the ferroelectric layer and the first side of the vertical channel, and a second intermediate insulating layer disposed between the back-gate electrodes and the second side of the vertical channel.