发明申请
- 专利标题： METHOD OF FABRICATING PEDESTAL BASED MEMORY DEVICES USING POCKET INTEGRATION
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申请号： US17485161申请日： 2021-09-24
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公开(公告)号： US20230070073A1公开(公告)日： 2023-03-09
- 发明人: Noriyuki Sato , Tanay Gosavi , Niloy Mukherjee , Amrita Mathuriya , Rajeev Kumar Dokania , Sasikanth Manipatruni
- 申请人： Kepler Computing, Inc.
- 申请人地址： US CA San Francisco
- 专利权人： Kepler Computing, Inc.
- 当前专利权人： Kepler Computing, Inc.
- 当前专利权人地址： US CA San Francisco
- 主分类号： H01L27/11507
- IPC分类号： H01L27/11507 ; H01L27/11514 ; H03K19/185 ; H01L23/538 ; H01L49/02
摘要：
A pocket integration for high density memory and logic applications and methods of fabrication are described. While various examples are described with reference to FeRAM, capacitive structures formed herein can be used for any application where a capacitor is desired. For instance, the capacitive structure can be used for fabricating ferroelectric based or paraelectric based majority gate, minority gate, and/or threshold gate.
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