Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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Application No.: US18226264Application Date: 2023-07-26
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Publication No.: US20230369442A1Publication Date: 2023-11-16
- Inventor: Yi-Fan Li , Wen-Yen Huang , Shih-Min Chou , Zhen Wu , Nien-Ting Ho , Chih- Chiang Wu , Ti-Bin Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Priority: TW 7134933 2018.10.03
- The original application number of the division: US16177368 2018.10.31
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/40 ; H01L27/092
Abstract:
A method for fabricating semiconductor device includes the steps of first providing a substrate having a first region and a second region, forming a first bottom barrier metal (BBM) layer on the first region and the second region, forming a first work function metal (WFM) layer on the first BBM layer on the first region and the second region, and then forming a diffusion barrier layer on the first WFM layer.
Public/Granted literature
- US12125890B2 Semiconductor device and method for fabricating the same Public/Granted day:2024-10-22
Information query
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