A semiconductor device includes a cell capacitor disposed on a substrate and that and includes a first electrode, a dielectric layer structure, and a second electrode. The dielectric layer structure includes a first dielectric layer disposed on the first electrode and that includes a ferroelectric material, a second dielectric layer disposed on the first dielectric layer and that includes an antiferroelectric material, and dielectric particles dispersed in at least one of the first dielectric layer or the second dielectric layer and that include a paraelectric material.