- 专利标题： LOW RESISTANCE MTJ ANTIFUSE CIRCUITRY DESIGNS AND METHODS OF OPERATION
-
申请号： US17847265申请日： 2022-06-23
-
公开(公告)号： US20230267982A1公开(公告)日： 2023-08-24
- 发明人: Syed M. ALAM
- 申请人： Everspin Technologies, Inc.
- 申请人地址： US AZ Chandler
- 专利权人： Everspin Technologies, Inc.
- 当前专利权人： Everspin Technologies, Inc.
- 当前专利权人地址： US AZ Chandler
- 主分类号： G11C11/16
- IPC分类号： G11C11/16 ; H01L23/525 ; H01L43/08 ; H01L43/02
摘要：
The present disclosure is drawn to, among other things, an antifuse circuit. The antifuse circuit includes a plurality of antifuse bitcells and a reference resistor. Each antifuse bitcell includes two or more memory bits and a reference resistor. The two or more memory bits are configured to be in a programmed state and at least one unprogrammed state.
信息查询
