- 专利标题： SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
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申请号： US17720286申请日： 2022-04-13
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公开(公告)号： US20230260905A1公开(公告)日： 2023-08-17
- 发明人: Xiaopei FANG , Gang-Yi Lin , Congcong Wang
- 申请人： Fujian Jinhua Integrated Circuit Co., Ltd.
- 申请人地址： CN Quanzhou City
- 专利权人： Fujian Jinhua Integrated Circuit Co., Ltd.
- 当前专利权人： Fujian Jinhua Integrated Circuit Co., Ltd.
- 当前专利权人地址： CN Quanzhou City
- 优先权： CN 2210146219.7 2022.02.17 CN 2220323085.7 2022.02.17
- 主分类号： H01L23/528
- IPC分类号： H01L23/528 ; H01L27/108
摘要：
A semiconductor structure includes a substrate, a first dielectric layer on the substrate, a second dielectric layer on the first dielectric layer, and an interconnection structure on the second dielectric layer. The interconnection structure includes at least two lateral extending portions on the second dielectric layer, and a U-shaped portion through the second dielectric layer and a portion of the first dielectric layer and connected between adjacent ends of the two lateral extending portions.
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