发明公开
- 专利标题: METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND PHOTORESIST COMPOSITION
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申请号: US17585033申请日: 2022-01-26
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公开(公告)号: US20230236507A1公开(公告)日: 2023-07-27
- 发明人: Tzu-Yang LIN , Chen-Yu LIU , Ching-Yu CHANG
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: G03F7/039
- IPC分类号: G03F7/039 ; G03F7/004 ; G03F7/20 ; C25D7/12 ; G03F7/32 ; G03F7/34
摘要:
A method of manufacturing a semiconductor structure includes the following operations. A photoresist layer is formed on a metal layer, in which the photoresist layer includes an additive selected from the group consisting of a first heterocyclic compound containing a triazole ring, a second heterocyclic compound containing an imidazole ring, biphenyl thiol, biphenyl dithiol, benzenethiol, and benzenedithiol. The photoresist layer is exposed to an actinic radiation. The photoresist layer is developed by a developer to form holes in the photoresist layer. Redistribution lines are formed in the holes by an electroplating process.
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