- 专利标题: STRESS ARREST LIP ON COPPER PAD FOR LOW ROUGHNESS COPPER
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申请号: US17561824申请日: 2021-12-24
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公开(公告)号: US20230207503A1公开(公告)日: 2023-06-29
- 发明人: Jieying KONG , Bainye Francoise ANGOUA , Dilan SENEVIRATNE , Whitney M. BRYKS , Jeremy D. ECTON
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L23/00
- IPC分类号: H01L23/00
摘要:
A system includes a metallic contact integrated onto a semiconductor integrated circuit substrate. The metallic contact has a contact surface to make electrical contact with a trace through a dielectric layer over the semiconductor circuit substrate and the metallic contact. The semiconductor circuit can include a trace that connects the contact to a package pad to enable external access to the signal from off the semiconductor circuit. The metallic contact includes a vertical lip extending vertically into the dielectric layer above the contact surface.
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