A semiconductor device includes: an n+-type drain region deposited at an upper part of a p-type semiconductor base body; an n-type drift region deposited to be in contact with the n+-type drain region; an n+-type source region opposed to the n+-type drain region with the n-type drift region interposed; a p-type gate region deposited to be in contact with the n-type drift region; an interlayer insulating film covering the n-type drift region; a resistive element having a spiral-like planar shape provided inside the interlayer insulating film; a drain electrode wire connected to the n+-type drain region and one end of the resistive element; a source electrode wire connected to the n+-type source region; a gate electrode wire connected to the p-type gate region; and a potential-dividing terminal wire connected to the resistive element, wherein a gap between the source electrode wire and an outermost circumference of the resistive element is constant.