Invention Application
- Patent Title: MRAM STRUCTURE AND METHOD OF FABRICATING THE SAME
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Application No.: US17844741Application Date: 2022-06-21
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Publication No.: US20220320420A1Publication Date: 2022-10-06
- Inventor: Kuo-Chih Lai , Yi-Syun Chou , Ko-Wei Lin , Pei-Hsun Kao , Wei Chen , Chia-Fu Cheng , Chun-Yao Yang , Chia-Chang Hsu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Priority: TW108121251 20190619
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L27/22 ; H01L43/12
Abstract:
A magnetoresistive random access memory (MRAM) structure includes a magnetic tunnel junction (MTJ), and a top electrode which contacts an end of the MTJ. The top electrode includes a top electrode upper portion and a top electrode lower portion. The width of the top electrode upper portion is larger than the width of the top electrode lower portion. A bottom electrode contacts another end of the MTJ. The top electrode, the MTJ and the bottom electrode form an MRAM.
Public/Granted literature
- US11856870B2 MRAM structure and method of fabricating the same Public/Granted day:2023-12-26
Information query
IPC分类:
