Invention Grant
- Patent Title: MRAM structure and method of fabricating the same
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Application No.: US17844741Application Date: 2022-06-21
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Publication No.: US11856870B2Publication Date: 2023-12-26
- Inventor: Kuo-Chih Lai , Yi-Syun Chou , Ko-Wei Lin , Pei-Hsun Kao , Wei Chen , Chia-Fu Cheng , Chun-Yao Yang , Chia-Chang Hsu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW 8121251 2019.06.19
- The original application number of the division: US16506983 2019.07.09
- Main IPC: H10N50/80
- IPC: H10N50/80 ; H10B61/00 ; H10N50/01
Abstract:
A magnetoresistive random access memory (MRAM) structure includes a magnetic tunnel junction (MTJ), and a top electrode which contacts an end of the MTJ. The top electrode includes a top electrode upper portion and a top electrode lower portion. The width of the top electrode upper portion is larger than the width of the top electrode lower portion. A bottom electrode contacts another end of the MTJ. The top electrode, the MTJ and the bottom electrode form an MRAM.
Public/Granted literature
- US20220320420A1 MRAM STRUCTURE AND METHOD OF FABRICATING THE SAME Public/Granted day:2022-10-06
Information query
