- 专利标题: SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
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申请号: US17657821申请日: 2022-04-04
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公开(公告)号: US20220319876A1公开(公告)日: 2022-10-06
- 发明人: Shinichi Hayashi , Hiroaki Inadomi , Shota Umezaki , Suguru Enokida , Kouji Kimoto
- 申请人: Tokyo Electron Limited
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 优先权: JP2021-063884 20210405
- 主分类号: H01L21/67
- IPC分类号: H01L21/67 ; H01L21/02 ; H01L21/677 ; B08B3/08 ; B08B13/00
摘要:
A substrate processing apparatus includes multiple first substrate processing devices, one or more second substrate processing devices and a transfer unit. Each of the multiple first substrate processing devices is configured to process a substrate one by one. The one or more second substrate processing devices are configured to simultaneously process multiple substrates, which are processed in the multiple first substrate processing devices. The transfer unit is configured to simultaneously carry the multiple substrates, which are processed in the multiple first substrate processing devices, into a same second substrate processing device.
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