- 专利标题： Semiconductor Device and Manufacturing Method Thereof for Selectively Etching Dummy Fins
-
申请号： US17568428申请日： 2022-01-04
-
公开(公告)号： US20220130826A1公开(公告)日： 2022-04-28
- 发明人: Zhi-Chang Lin , Wei-Hao Wu , Jia-Ni Yu
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L27/02 ; H01L27/11 ; H01L29/08 ; H01L21/8238 ; H01L29/66 ; H01L21/311
摘要：
A semiconductor device includes a first device fin and a second device fin that are each located in a first region of the semiconductor device. The first region has a first pattern density. A first dummy fin is located in the first region. The first dummy fin is disposed between the first device fin and the second device fin. The first dummy fin has a first height. A third device fin and a fourth device fin are each located in a second region of the semiconductor device. The second region has a second pattern density that is greater the first pattern density. A second dummy fin is located in the second region. The second dummy fin is disposed between the third device fin and the fourth device fin. The second dummy fin has a second height that is greater than the first height.
公开/授权文献
信息查询
IPC分类:
