Invention Application
- Patent Title: METHODS OF DETERMINING CORRECTIONS FOR A PATTERNING PROCESS, DEVICE MANUFACTURING METHOD, CONTROL SYSTEM FOR A LITHOGRAPHIC APPARATUS AND LITHOGRAPHIC APPARATUS
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Application No.: US17102850Application Date: 2020-11-24
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Publication No.: US20210080836A1Publication Date: 2021-03-18
- Inventor: Weitian KOU , Alexander YPMA , Marc HAUPTMANN , Michiel KUPERS , Lydia Marianna VERGAIJ-HUIZER , Erik Johannes Maria WALLERBOS , Erik Henri Adriaan DELVIGNE , Willem Seine Christian ROELOFS , Hakki Ergün CEKLI , Stefan Cornelis Theodorus VAN DER SANDEN , Cédric Désiré GROUWSTRA , David Frans Simon DECKERS , Manuel GIOLLO , Iryna DOVBUSH
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML NETHERLANDS B.V.
- Current Assignee: ASML NETHERLANDS B.V.
- Current Assignee Address: NL Veldhoven
- Priority: EP16195047.2 20161021,EP17150658.7 20170109,EP17154129.5 20170201,EP17187411.8 20170823
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.
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