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公开(公告)号：US20210080836A1
公开(公告)日：2021-03-18
申请号：US17102850
申请日：2020-11-24
Applicant: ASML NETHERLANDS B.V.
Inventor： Weitian KOU , Alexander YPMA , Marc HAUPTMANN , Michiel KUPERS , Lydia Marianna VERGAIJ-HUIZER , Erik Johannes Maria WALLERBOS , Erik Henri Adriaan DELVIGNE , Willem Seine Christian ROELOFS , Hakki Ergün CEKLI , Stefan Cornelis Theodorus VAN DER SANDEN , Cédric Désiré GROUWSTRA , David Frans Simon DECKERS , Manuel GIOLLO , Iryna DOVBUSH
IPC: G03F7/20
Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.
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公开(公告)号：US20190094721A1
公开(公告)日：2019-03-28
申请号：US16132520
申请日：2018-09-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Edo Maria HULSEBOS , Henricus Johannes Lambertus MEGENS , Sudharshanan RAGHUNATHAN , Boris MENCHTCHIKOV , Ahmet Koray ERDAMAR , Loek Johannes Petrus VERHEES , Willem Seine Christian ROELOFS , Wendy Johanna Martina VAN DE VEN , Hadi YAGUBIZADE , Hakki Ergün CEKLI , Ralph BRINKHOF , Tran Thanh Thuy VU , Maikel Robert GOOSEN , Maaike VAN'T WESTEINDE , Weitian KOU , Manouk RIJPSTRA , Matthijs COX , Franciscus Godefridus Casper BIJNEN
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：US20200310242A1
公开(公告)日：2020-10-01
申请号：US16099452
申请日：2017-05-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus VAN HAREN , Reiner Maria JUNGBLUT , Leon Paul VAN DIJK , Willem Seine Christian ROELOFS , Wim Tjibbo TEL , Stefan HUNSCHE , Maurits VAN DER SCHAAR
Abstract: A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.
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公开(公告)号：US20200019067A1
公开(公告)日：2020-01-16
申请号：US16335277
申请日：2017-09-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Weitian KOU , Alexander YPMA , Marc HAUPTMANN , Michiel KUPERS , Lydia Marianna VERGAIJ-HUIZER , Erik Johannes Maria WALLERBOS , Erik Henri Adriaan DELVIGNE , Willem Seine Christian ROELOFS , Hakki Ergün CEKLI , Stefan Cornelis Theodorus VAN DER SANDEN , Cedric Desire GROUWSTRA , David Frans Simon DECKERS , Manuel GIOLLO , Iryna DOVBUSH
IPC: G03F7/20
Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.
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公开(公告)号：US20220229373A1
公开(公告)日：2022-07-21
申请号：US17715112
申请日：2022-04-07
Applicant: ASML NETHERLANDS B.V.
Inventor： Weitian KOU , Alexander YPMA , Marc HAUPTMANN , Michiel KUPERS , Lydia Marianna VERGAIJ-HUIZER , Erik Johannes Maria WALLERBOS , Erik Henri Adriaan DELVIGNE , Willem Seine Christian ROELOFS , Hakki Ergün CEKLI , Stefan Cornelis Theodorus VAN DER SANDEN , Cédric Désiré GROUWSTRA , David Frans Simon DECKERS , Manuel GIOLLO , Iryna DOVBUSH
IPC: G03F7/20
Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.
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Patent Agency Ranking
公开(公告)号：US20200272061A1
公开(公告)日：2020-08-27
申请号：US16650520
申请日：2018-09-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Edo Maria HULSEBOS , Henricus Johannes Lambertus MEGENS , Ahmet Koray ERDAMAR , Loek Johannes Petrus VERHEES , Willem Seine Christian ROELOFS , Wendy Johanna Martina VAN DE VEN , Hadi YAGUBIZADE , Hakki Ergün CEKLI , Ralph BRINKHOF , Tran Thanh Thuy VU , Maikel Robert GOOSEN , Maaike VAN T WESTEINDE , Weitian KOU , Manouk RIJPSTRA , Matthijs COX , Franciscus Godefridus Casper BIJNEN
IPC: G03F7/20
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
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7.发明申请公开(公告)号：US20190294059A1
公开(公告)日：2019-09-26
申请号：US16304419
申请日：2017-05-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Leon Paul VAN DIJK , Victor Emanuel CALADO , Willem Seine Christian ROELOFS , Richard Johannes Franciscus VAN HAREN
IPC: G03F7/20 , G01N21/956 , G01N21/94 , G01N21/95 , G03F1/64
Abstract: A method of determining a pellicle compensation correction which compensates for a distortion of a patterning device resultant from mounting of a pellicle onto the patterning device. The method includes determining a pellicle induced distortion from a first shape associated with the patterning device without the pellicle mounted and a second shape associated with the patterning device with the pellicle mounted, the pellicle induced distortion describing the distortion of the patterning device due to the pellicle being mounted. The determined pellicle induced distortion is then used to calculate the pellicle compensation correction for a lithographic exposure step using the patterning device.
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8.发明申请公开(公告)号：US20220035259A1
公开(公告)日：2022-02-03
申请号：US17501911
申请日：2021-10-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Hakki Ergün CEKLI , Masashi ISHIBASHI , Wendy Johanna Martina VAN DE VEN , Willem Seine Christian ROELOFS , Elliott Gerard MC NAMARA , Rizvi RAHMAN , Michiel KUPERS , Emil Peter SCHMITT-WEAVER , Erik Henri Adriaan DELVIGNE
IPC: G03F7/20 , G01N21/956 , G03F9/00 , H01L21/66
Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.
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公开(公告)号：US20200081356A1
公开(公告)日：2020-03-12
申请号：US16686418
申请日：2019-11-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Edo Maria HULSEBOS , Henricus Johannes Lambertus MEGENS , Sudharshanan RAGHUNATHAN , Boris MENCHTCHIKOV , Ahmet Koray ERDAMAR , Loek Johannes Petrus VERHEES , Willem Seine Christian ROELOFS , Wendy Johanna Martina VAN DE VEN , Hadi YAGUBIZADE , Hakki Ergün CEKLI , Ralph BRINKHOF , Tran Thanh Thuy VU , Maikel Robert GOOSEN , Maaike VAN'T WESTEINDE , Weitian KOU , Manouk RIJPSTRA , Matthijs COX , Franciscus Godefridus Casper BIJNEN
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method comprising: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
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10.发明申请公开(公告)号：US20190137892A1
公开(公告)日：2019-05-09
申请号：US16098165
申请日：2017-04-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Hakki Ergün CEKLI , Masashi ISHIBASHI , Wendy Johanna Marthina VAN DE VEN , Willem Seine Christian ROELOFS , Elliott Gerard MC NAMARA , Rizvi RAHMAN , Michiel KUPERS , Emil Peter SCHMITT-WEAVER , Erilk Henri Adriaan DELVIGNE
IPC: G03F7/20 , G03F9/00 , G01N21/956 , H01L21/66
Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.
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