发明申请
- 专利标题： SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
-
申请号： US16997210申请日： 2020-08-19
-
公开(公告)号： US20200381313A1公开(公告)日： 2020-12-03
- 发明人: Akira AMANO , Takayuki SATOMURA , Yuichi TAKEUCHI , Katsumi SUZUKI , Sachiko AOI
- 申请人： DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA
- 优先权： JP2016-169815 20160831
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; H01L29/78 ; G01B11/06 ; H01L29/12 ; H01L21/265 ; H01L29/16 ; H01L29/66
摘要：
When a film thickness of a second epitaxial film is measured, an infrared light is irradiated from a surface side of the second epitaxial film onto a base layer on which a first epitaxial film and the second epitaxial film are formed. A reflected light from an interface between the first epitaxial film and the base layer and a reflected light from a surface of the second epitaxial film are measured to obtain a two-layer film thickness, which is a total film thickness of the first epitaxial film and the second epitaxial film. The film thickness of the second epitaxial film is calculated by subtracting a one-layer film thickness, which is a film thickness of the first epitaxial film, from the two-layer film thickness.
公开/授权文献
信息查询
IPC分类:
