- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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申请号： US16818515申请日： 2020-03-13
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公开(公告)号： US20200328178A1公开(公告)日： 2020-10-15
- 发明人: Hiroyuki MASUMOTO
- 申请人： Mitsubishi Electric Corporation
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2fcc1441
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L25/07 ; H01L25/18 ; H01L23/049 ; H01L23/373 ; H01L21/48 ; H01L25/00
摘要：
A semiconductor device includes an insulation substrate including a circuit pattern, semiconductor chips mounted on the circuit pattern, a wire connecting between the semiconductor chips and between the semiconductor chip and the circuit pattern, and a conductive material serving as a conductor formed integrally with the wire.
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