- 专利标题： Semiconductor device and method for manufacturing semiconductor device
-
申请号： US16818515申请日： 2020-03-13
-
公开(公告)号： US11532590B2公开(公告)日： 2022-12-20
- 发明人: Hiroyuki Masumoto
- 申请人： Mitsubishi Electric Corporation
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Studebaker & Brackett PC
- 优先权： JPJP2019-076289 20190412
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L25/18 ; H01L23/049 ; H01L23/373 ; H01L21/48 ; H01L25/00 ; H01L25/07
摘要：
A semiconductor device includes an insulation substrate including a circuit pattern, semiconductor chips mounted on the circuit pattern, a wire connecting between the semiconductor chips and between the semiconductor chip and the circuit pattern, and a conductive material serving as a conductor formed integrally with the wire.
公开/授权文献
信息查询
IPC分类:
