Invention Application
- Patent Title: Field Effect Transistors with Ferroelectric Dielectric Materials
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Application No.: US16218151Application Date: 2018-12-12
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Publication No.: US20200127111A1Publication Date: 2020-04-23
- Inventor: Cheng-Ming Lin , Kai Tak Lam , Sai-Hooi Yeong , Chi On Chui , Ziwei Fang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L29/49 ; H01L29/66 ; H01L21/28 ; H01L21/768 ; H01L29/78
Abstract:
A method of forming a semiconductor device includes forming a hafnium-containing layer over a semiconductor layer, simultaneously performing a thermal annealing process and applying an electrical field to the hafnium-containing layer to form a ferroelectric hafnium-containing layer, and forming a gate electrode over the ferroelectric hafnium-containing layer.
Public/Granted literature
- US10707320B2 Field effect transistors with ferroelectric dielectric materials Public/Granted day:2020-07-07
Information query
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