Invention Application
- Patent Title: REFLECTIVE MASK BLANK, REFLECTIVE MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
-
Application No.: US16490018Application Date: 2018-02-20
-
Publication No.: US20190384158A1Publication Date: 2019-12-19
- Inventor: Yohei IKEBE , Tsutomu SHOKI , Takahiro ONOUE , Hirofumi KOZAKAI
- Applicant: HOYA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2017-040043 20170303; JP2017-107394 20170531
- International Application: PCT/JP2018/006054 WO 20180220
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/26 ; C23C14/14

Abstract:
Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k
Public/Granted literature
- US11003068B2 Reflective mask blank, reflective mask and method of manufacturing semiconductor device Public/Granted day:2021-05-11
Information query