- 专利标题： LOW RESISTANCE CONTACTS INCLUDING INTERMETALLIC ALLOY OF NICKEL, PLATINUM, TITANIUM, ALUMINUM AND TYPE IV SEMICONDUCTOR ELEMENTS
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申请号： US16258041申请日： 2019-01-25
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公开(公告)号： US20190157203A1公开(公告)日： 2019-05-23
- 发明人: John Bruley , Jack O. Chu , Kam-Leung Lee , Ahmet S. Ozcan , Paul M. Solomon , Jeng-bang Yau
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 主分类号： H01L23/535
- IPC分类号： H01L23/535 ; C22C30/00 ; H01L21/768 ; H01L23/532 ; H01L29/78
摘要：
A method of forming a contact to a semiconductor device is provided that forms an alloy composed of nickel (Ni), platinum (Pt), aluminum (Al), titanium (Ti) and a semiconductor material. The methods may include forming a nickel and platinum semiconductor alloy at a base of a via. A titanium layer having an angstrom scale thickness is deposited in the via in contact with the nickel platinum semiconductor alloy. An aluminum containing fill is deposited atop the titanium layer. A forming gas anneal including an oxygen containing atmosphere is applied to the structure to provide a contact alloy comprising nickel, platinum, aluminum, titanium and a semiconductor element from the contact surface of the semiconductor device.
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