Invention Application
- Patent Title: THREE DIMENSIONAL MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
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Application No.: US15664026Application Date: 2017-07-31
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Publication No.: US20190035802A1Publication Date: 2019-01-31
- Inventor: Erh-Kun Lai , Hsiang-Lan Lung
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L21/311 ; H01L27/11565 ; H01L21/768
Abstract:
A 3D memory device includes a substrate, a multi-layers stack, at least one memory structure and an etching stop structure. The substrate has a trench. The multi-layers stack includes a first extending portion forming a non-straight angle with a bottom surface of the trench and a second extending portion, wherein both of the first extending portion and the second extending portion include a plurality of conductive layers and a plurality of insulating layers alternatively stacked in the trench. The memory structure is formed in the first extending portion. The etching stop structure is at least partially disposed in the second extending portion and has a material identical to that of the memory structure.
Public/Granted literature
- US1620467A Low-speed-pedal actuating and holding means Public/Granted day:1927-03-08
Information query
IPC分类:
