Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
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Application No.: US15696201Application Date: 2017-09-06
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Publication No.: US20190027603A1Publication Date: 2019-01-24
- Inventor: Chi-Hsuan Cheng , Cheng-Pu Chiu , Yu-Chih Su , Chih-Yi Wang , Chin-Yang Hsieh , Tien-Shan Hsu , Yao-Jhan Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Priority: TW106124194 20170719
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/092 ; H01L29/06 ; H01L21/8238
Abstract:
A semiconductor device and a method of forming the same, the semiconductor device includes a first and a second fin structures, a first, a second and a third isolation structures, and a first and a second gate structures. The first and second fin structures are disposed in a substrate. The first isolation structure is disposed in the substrate and surrounds the first and second fin structures. The second isolation structure is disposed in the first fin structure, and a top surface of the second isolation structure is leveled with a top surface of the first and second fin structures. The third isolation structure is disposed in the second fin shaped structure, and a top surface of the third isolation structure is lower than the top surface of the first and second fin structures. The first and second gate structures are disposed on the second and third isolation structures, respectively.
Public/Granted literature
- US10217866B2 Semiconductor device and method of forming the same Public/Granted day:2019-02-26
Information query
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