A planarization method includes providing a substrate having a semiconductor structure formed thereon. A dielectric layer is formed on the substrate, and a mask layer is formed on the dielectric layer. A first chemical mechanical polishing process is performed to remove a portion of the mask layer thereby forming an opening directly over the semiconductor structure and exposing the dielectric layer. A first etching process is performed to anisotropically remove a portion of the dielectric layer from the opening. The mask layer is then removed and a second chemical mechanical polishing process is then performed.